IIIB-3 scattering analysis of low surface-effective-field mobility degradation in sub-100Å gate oxide MOSFETS

Author

Mize, J.P. ; Yu-Pin Han ; Pinto, Joel ; Worley, Rick

Volume

Issue

fYear

1983

fDate

11/1/1983 12:00:00 AM

Firstpage

1581

Lastpage

1582

Keywords

Boltzmann equation; Boron; Degradation; Impurities; MOSFET circuits; Numerical models; Scattering; Testing; Thickness measurement; Writing;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1983.21366

Filename

1483267

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