Title :
A small-signal model for the frequency-dependent drain admittance in floating-substrate MOSFET´s
Author :
Howes, Rupert ; Redman-White, William
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
fDate :
8/1/1992 12:00:00 AM
Abstract :
The frequency-dependent drain admittance of silicon-on-sapphire (SOS) MOSFETs is examined from the perspective of the circuit designer. Measurements of small-signal drain characteristics as a function of frequency, bias conditions, and device geometry, which have major implications for analog circuit design, are presented. These are explained in terms of a small-signal circuit model. Physical explanations for the observations are given and the poles and zeros of the model identified to assist designers carrying out hand calculations with easily manipulated expressions. Frequency-dependent thermal effects are discussed. It is shown that similar effects can be expected in other SOI technologies
Keywords :
electric admittance; insulated gate field effect transistors; poles and zeros; semiconductor device models; thermal analysis; SOI technologies; SOS MOSFET; Si-Al2O3; analog circuit design; bias conditions; device geometry; floating-substrate; frequency-dependent drain admittance; poles and zeros; small-signal drain characteristics; small-signal model; thermal effects; Admittance; Analog circuits; Dielectric substrates; Fabrication; Frequency measurement; Geometry; Isolation technology; MOSFET circuits; Poles and zeros; Signal design;
Journal_Title :
Solid-State Circuits, IEEE Journal of
