DocumentCode :
1087781
Title :
IIIB-6 "CODMOS" — A depletion MOSFET using fixed oxide charge
Author :
Kazerounian, R. ; Oldham, W.G.
Volume :
30
Issue :
11
fYear :
1983
fDate :
11/1/1983 12:00:00 AM
Firstpage :
1583
Lastpage :
1584
Keywords :
Electrodes; Electrons; Fabrication; Insulation; Ion implantation; MOSFET circuits; Resistors; Silicon compounds; Temperature sensors; Testing;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21369
Filename :
1483270
Link To Document :
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