DocumentCode :
1087796
Title :
A Ga0.47 In0.53 As/InP heterophotodiode with reduced dark current
Author :
Pearsall, Thomas P. ; Piskorski, M. ; Brochet, A. ; Chevrier, J.
Author_Institution :
Bell Labs., Murray Hill, NJ, USA
Volume :
17
Issue :
2
fYear :
1981
fDate :
2/1/1981 12:00:00 AM
Firstpage :
255
Lastpage :
259
Abstract :
We have used a Ga0.47 In0.53 As/InP heterostructure to produce a photodiode (area = 
cm2) which shows a saturated dark current of 100 pA at 23°C and 1.7 nA at 50°C. At this dark current, these photodiodes have near-unity quantum efficiency at 1.6 μm and show good photoresponse over the 
m region of the optical spectrum.
cm2) which shows a saturated dark current of 100 pA at 23°C and 1.7 nA at 50°C. At this dark current, these photodiodes have near-unity quantum efficiency at 1.6 μm and show good photoresponse over the m region of the optical spectrum.Keywords :
Charge carrier processes; Optical fiber receivers; Dark current; Indium phosphide; Optical receivers; Optical saturation; Optical sensors; Photodiodes; Photonic band gap; Semiconductor diodes; Semiconductor materials; Temperature sensors;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1071057
Filename :
1071057
Link To Document :
