Title :
High-power (106 mW) CW operation of transverse-mode stabilised InGaAlP laser diodes with strained In0.62Ga0.38P active layer
Author :
Nitta, Katsumi ; Itaya, Kazuhiko ; Nishikawa, Yoshihiro ; Ishikawa, Masatoshi ; Okajima, M. ; Hatakoshi, G.
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
High-power CW operation of transverse-mode stabilised InGaAlP laser diodes has been achieved by using a selectively-buried-ridge waveguide structure with a very thin (150 AA) active layer. A strained In0.62Ga0.38P active layer was adopted to obtain a sufficient bandgap difference between the active and cladding layers. A maximum light output of 106 mW was obtained from the laser with antireflection and high-reflection coatings.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 106 mW; 150 A; InGaAlP laser diodes; SBR lasers; antireflection layers; bandgap difference; cladding layers; high power CW operation; high-reflection coatings; light output; selectively-buried-ridge waveguide structure; semiconductors; strained In 0.62Ga 0.38P active layer; thin active layer; transverse-mode stabilised;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911037
