Title :
IIIB-9 dopant profile control by rapid thermal annealing in boron and arsenic implanted silicon
Author :
Narayan, J. ; Wortman, J.J. ; Ozguz, V. ; Rozgonyi, G.A.
fDate :
11/1/1983 12:00:00 AM
Keywords :
Boron; Electrons; Gallium arsenide; Ion implantation; Laboratories; Lamps; Microelectronics; Rapid thermal annealing; Silicon; Tungsten;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21373
