DocumentCode :
1087844
Title :
IVA-3 selectively doped heterostructure divided-by-two circuit
Author :
Kiehl, R.A. ; Feuer, Mark D. ; Hendel, R.H. ; Hwang, James C. M. ; Keramidas, V.G. ; Dingle, R.
Volume :
30
Issue :
11
fYear :
1983
fDate :
11/1/1983 12:00:00 AM
Firstpage :
1587
Lastpage :
1588
Keywords :
Driver circuits; Electron mobility; Energy consumption; Gallium arsenide; HEMTs; Heterojunctions; Logic circuits; MODFETs; Read-write memory; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21375
Filename :
1483276
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1087844
