DocumentCode :
1087852
Title :
The liquid-phase epitaxial growth of low net donor concentration (5 × 1014-5 × 1015/cm3) GaSb for detector applications in the 1.3 - 1.6 µm region
Author :
Capasso, Federico ; Panish, Morton B. ; Sumski, Stanley
Author_Institution :
Bell Laboratories, Murray Hill, NJ, USA
Volume :
17
Issue :
2
fYear :
1981
fDate :
2/1/1981 12:00:00 AM
Firstpage :
273
Lastpage :
274
Abstract :
We report on the liquid-phase epitaxial (LPE) growth of low doped n-GaSb for long wavelength photodiodes. Very low net donor concentration epilayers ( 
/cm3) were grown both from undoped Ga rich solutions in the 
C range and by compensation using Ga-rich solutions at 
C with intentionally added Te. The preparation of Au-GaSb Schottky diodes for 
profiling is also discussed.
/cm3) were grown both from undoped Ga rich solutions in the C range and by compensation using Ga-rich solutions at C with intentionally added Te. The preparation of Au-GaSb Schottky diodes for profiling is also discussed.Keywords :
Gallium materials/devices; Optical fiber receivers; Semiconductor device doping; Atomic layer deposition; Atomic measurements; Detectors; Doping; Epitaxial growth; Photodiodes; Schottky diodes; Substrates; Tellurium; Temperature distribution;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1071062
Filename :
1071062
Link To Document :
