Title :
Growth and characterization of 1.3 µm CW GaInAsP/InP lasers by liquid-phase epitaxy
Author :
Ng, Willie W. ; Dapkus, P.D.
Author_Institution :
Electronic Research Center, Rockwell International, Thousand Oaks, CA, USA
fDate :
2/1/1981 12:00:00 AM
Abstract :
The variation of the threshold current density and its temperature dependence with acceptor concentration in GaInAsP/InP lasers emitting at 1.3 μm is described. Mechanisms responsible for the dependence are identified. A model is developed to predict the effect of the above dependence on the CW operation range of these devices. The validity of the model is verified experimentally.
Keywords :
CW lasers; Gallium materials/lasers; Optical fiber transmitters; Charge carrier lifetime; DH-HEMTs; Epitaxial growth; Furnaces; Indium phosphide; Laser modes; Predictive models; Semiconductor process modeling; Temperature sensors; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1981.1071063
