Continuous room-temperature photopumped laser operation of visible-spectrum LPE In1-xGaxP1-zAsz(λ ~ 6700 Å)

Author

Kirchoefer, Steven W. ; Rezek, Edward A. ; Vojak, Bruce A. ; Holonyak, Nick, Jr. ; Finn, D. ; Keune, D.L. ; Rossi, J.A.

Author_Institution

University of Illinois at Urbana-Chapaign, Urbana, IL, USA

Volume

17

Issue

2

fYear

1981

fDate

2/1/1981 12:00:00 AM

Firstpage

161

Lastpage

166

Abstract

A modified version of the standard step cooled LPE growth process is described for the growth of visible-spectrum In1-xGaxP1-zAszdouble-heterostructure (DH) lasers on GaAs1-yPy( $y \\sim 0.30$ ). The quality of the quaternary epitaxial layers is improved by growing a "thick" uniform active region (∼1000 Å) by means of a multiple-layer stack of "thin" (∼100 Å) layers. Each of the "thin" layers grown (cyclically) from an equilibrium melt in the short growth period of <100 ms does not make a transition to the diffusion-limited conditions employed in standard LPE growth processes. This method of liquid-phase epitaxy has been used to grow In1-xGaxP1-zAsz-In1-x\´Gax\´- P1-z\´Asz\´( $x \\sim 0.87, z \\sim 0.44; x\´ \\sim 0.66, z\´ l\\sim 0.01$ ) DH\´s that operate as photopumped CW 300 K lasers at $\\lambda \\sim 6700$ Å.

Keywords

CW lasers; Gallium materials/lasers; Laser thermal factors; Visible lasers; DH-HEMTs; Epitaxial growth; Epitaxial layers; Laboratories; Laser transitions; Light sources; Optical materials; Optical pulses; Semiconductor lasers; Semiconductor materials;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.1981.1071064

Filename

1071064