DocumentCode :
1087874
Title :
Continuous room-temperature photopumped laser operation of visible-spectrum LPE In1-x Gax P1-z Asz (λ ~ 6700 Å)
Author :
Kirchoefer, Steven W. ; Rezek, Edward A. ; Vojak, Bruce A. ; Holonyak, Nick, Jr. ; Finn, D. ; Keune, D.L. ; Rossi, J.A.
Author_Institution :
University of Illinois at Urbana-Chapaign, Urbana, IL, USA
Volume :
17
Issue :
2
fYear :
1981
fDate :
2/1/1981 12:00:00 AM
Firstpage :
161
Lastpage :
166
Abstract :
A modified version of the standard step cooled LPE growth process is described for the growth of visible-spectrum In1-x Gax P1-z Asz double-heterostructure (DH) lasers on GaAs1-y Py ( 
). The quality of the quaternary epitaxial layers is improved by growing a "thick" uniform active region (∼1000 Å) by means of a multiple-layer stack of "thin" (∼100 Å) layers. Each of the "thin" layers grown (cyclically) from an equilibrium melt in the short growth period of <100 ms does not make a transition to the diffusion-limited conditions employed in standard LPE growth processes. This method of liquid-phase epitaxy has been used to grow In1-x Gax P1-z Asz -In1-x\´ Gax\´ - P1-z\´ Asz\´ ( 
) DH\´s that operate as photopumped CW 300 K lasers at 
Å.
). The quality of the quaternary epitaxial layers is improved by growing a "thick" uniform active region (∼1000 Å) by means of a multiple-layer stack of "thin" (∼100 Å) layers. Each of the "thin" layers grown (cyclically) from an equilibrium melt in the short growth period of <100 ms does not make a transition to the diffusion-limited conditions employed in standard LPE growth processes. This method of liquid-phase epitaxy has been used to grow In ) DH\´s that operate as photopumped CW 300 K lasers at Å.Keywords :
CW lasers; Gallium materials/lasers; Laser thermal factors; Visible lasers; DH-HEMTs; Epitaxial growth; Epitaxial layers; Laboratories; Laser transitions; Light sources; Optical materials; Optical pulses; Semiconductor lasers; Semiconductor materials;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1071064
Filename :
1071064
Link To Document :
