Title :
IVA-6 ultra high intensity argon arc lamp annealing of ion implanted GaAs devices
Author :
Tabatabaie-Alavi, K. ; Kanbe, H. ; Masum Choudhury, A.N.M. ; Fonstad, C.G.
fDate :
11/1/1983 12:00:00 AM
Keywords :
Annealing; Argon; Diodes; Doping; Furnaces; Gallium arsenide; HEMTs; III-V semiconductor materials; Implants; Materials science and technology;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21378
