DocumentCode
1087882
Title
Self-oscillations and dynamic behavior of aged InGaAsP laser diodes
Author
Channin, D.J. ; Olsen, Gregory H. ; Ettenberg, Michael
Author_Institution
RCA Labs., Princeton, NJ, USA
Volume
17
Issue
2
fYear
1981
fDate
2/1/1981 12:00:00 AM
Firstpage
207
Lastpage
210
Abstract
The pulse response of vapor-phase grown InGaAsP/InP 1.3 μm laser diodes was studied before and after accelerated aging. Dynamic behavior, including self-sustained oscillations, was found to be largely unaffected by the aging process. This indicates that these lasers can be preselected for specified modulation characteristics that will remain constant over the operating life of the diode.
Keywords
Gallium materials/lasers; Pulsed lasers; Semiconductor device reliability; Accelerated aging; Diode lasers; Indium phosphide; Laser modes; Optical modulation; Optical pulses; Pulse modulation; Ring lasers; Stability; Substrates;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1981.1071065
Filename
1071065
Link To Document