DocumentCode :
1087892
Title :
Low dark-current, high gain GaInAs/InP avalanche photodetectors
Author :
Diadiuk, Vicky ; Groves, Steven H. ; Hurwitz, Charles E. ; Iseler, Gerald W.
Author_Institution :
Lincoln Lab., M.I.T., Lexington, MA, USA
Volume :
17
Issue :
2
fYear :
1981
fDate :
2/1/1981 12:00:00 AM
Firstpage :
260
Lastpage :
264
Abstract :
High performance inverted-mesa GaInAsP/InP avalanche photodiodes responding out to 1.25 μm have been fabricated. Uniform avalanche gains 
, of 700 dark-current densities of 
A/cm2at 
, and an excess noise factor of ∼3 at have been achieved by placing the p-n junction in the InP and using a new passivation technique. Pulse-response rise times of less than 160 ps, limited by the rise time of the mode-locked Nd:YAG laser pulse, were measured with an avalanche gain of 40.
, of 700 dark-current densities of A/cm2at , and an excess noise factor of ∼3 at have been achieved by placing the p-n junction in the InP and using a new passivation technique. Pulse-response rise times of less than 160 ps, limited by the rise time of the mode-locked Nd:YAG laser pulse, were measured with an avalanche gain of 40.Keywords :
Avalanche photodiodes; Optical fiber receivers; Avalanche photodiodes; Gain measurement; Indium phosphide; Laser mode locking; Laser noise; Optical pulses; P-n junctions; Passivation; Photodetectors; Pulse measurements;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1071066
Filename :
1071066
Link To Document :
