DocumentCode
1087908
Title
IVA-7 a new high purity Si doping source for MBE grown GaAs devices
Author
Kirchner, Peter D. ; Woodall, Jerry M. ; Wright, S.
Volume
30
Issue
11
fYear
1983
fDate
11/1/1983 12:00:00 AM
Firstpage
1590
Lastpage
1590
Keywords
Contamination; Doping profiles; Gallium arsenide; HEMTs; III-V semiconductor materials; MODFETs; Materials reliability; Molecular beam epitaxial growth; Nitrogen; Transmitters;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21380
Filename
1483281
Link To Document