DocumentCode :
1087912
Title :
Ga1-x Alx Sb avalanche photodiodes: Resonant impact ionization with very high ratio of ionization coefficients
Author :
Hildebrand, O. ; Kuebart, W. ; Benz, K.W. ; Pilkuhn, M.H.
Author_Institution :
Physikalisches Institut, Universität Stuttgart, Stuttgart, Germany
Volume :
17
Issue :
2
fYear :
1981
fDate :
2/1/1981 12:00:00 AM
Firstpage :
284
Lastpage :
288
Abstract :
The liquid-phase epitaxy and device fabrication of p-n and p-i-n Ga1-x Alx Sb avalanche photodiodes is described. Breakdown voltages up to 95 V and dark currents of 10-4A/cm2have been obtained. With p-i-n diodes we have measured the impact ionization coefficients α (electrons) and β (holes) with different composition and temperature. A resonant enhancement of the hole ionization coefficient is found for 
(300 K) where the ratio 
exceeds values of 20. This effect is attributed to impact ionization initiated by holes from the split-off valence band: if the spin orbit splitting Δ is equal to the bandgap energy Eg , the threshold energy for hole initiated impact ionization reaches the smallest possible value ( 
) and the ionization process occurs with zero momentum. This leads to a strong increase of β at 
. The experimentally determined dependence of ionization coefficients on threshold energy is compared with theoretical expectations.
(300 K) where the ratio exceeds values of 20. This effect is attributed to impact ionization initiated by holes from the split-off valence band: if the spin orbit splitting Δ is equal to the bandgap energy E ) and the ionization process occurs with zero momentum. This leads to a strong increase of β at . The experimentally determined dependence of ionization coefficients on threshold energy is compared with theoretical expectations.Keywords :
Avalanche photodiodes; Charge carrier processes; Optical fiber receivers; Piezoelectric transducers; Avalanche photodiodes; Charge carrier processes; Dark current; Epitaxial growth; Extraterrestrial measurements; Fabrication; Impact ionization; P-i-n diodes; PIN photodiodes; Temperature;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1071068
Filename :
1071068
Link To Document :
