Optical coupling of GaAs photodetectors integrated with lithium niobate waveguides

Author

Chan, W.K. ; Yi-Yan, A. ; Gmitter, T.J. ; Florez, L.T. ; Jackel, J. L L ; Hwang, D.M. ; Yablonovitch, E. ; Bhat, R. ; Harbison, J. P P

Author_Institution

Bellcore, Red Bank, NJ, USA

Volume

2

Issue

3

fYear

1990

fDate

3/1/1990 12:00:00 AM

Firstpage

194

Lastpage

196

Abstract

The optical coupling of GaAs photodetectors integrated with LiNbO/sub 3/ waveguides using epitaxial liftoff is measured and compared to calculations based on a complex index model. The measured coupling is found to be comparable to that obtained in epitaxial semiconductor waveguide detectors, but it is lower than expected. Low coupling efficiency is attributed to the presence of a low index barrier layer, not present in semiconductor-based structures, at the GaAs-LiNbO/sub 3/ interface. A simple method of restoring the coupling to its original value without the need to eliminate the barrier layer is proposed.<>

Keywords

III-V semiconductors; gallium arsenide; integrated optics; lithium compounds; optical couplers; optical waveguides; photodetectors; refractive index; GaAs photodetectors; GaAs-LiNbO/sub 3/; LiNbO/sub 3/ waveguides; barrier layer; complex index model; coupling efficiency; epitaxial liftoff; epitaxial semiconductor waveguide detectors; integrated optics; low index barrier layer; measured coupling; optical coupling; semiconductor-based structures; Absorption; Detectors; Gallium arsenide; Integrated optics; Lithium niobate; Optical coupling; Optical waveguides; Photodetectors; Semiconductor materials; Semiconductor waveguides;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.50887

Filename

50887