Title :
A 3 GHz transimpedance OEIC receiver for 1.3-1.55 mu m fiber-optic systems
Author :
Chang, G.-K. ; Hong, W.P. ; Gimlett, J.L. ; Bhat, R. ; Nguyen, C.K. ; Sasaki, G. ; Young, J.C.
Author_Institution :
Bellcore, Red Bank, NJ, USA
fDate :
3/1/1990 12:00:00 AM
Abstract :
A high-performance metal-semiconductor-metal high-electron-mobility transistor (MSM-HEMT) transimpedance photoreceiver fabricated using OMCVD-grown InAlAs/InGaAs heterostructures on an InP substrate is discussed. This is the first demonstration of a monolithically integrated receiver amplifier that incorporates a cascode amplifier stage and a Schottky diode level-shifting stage implemented on InP-based optoelectronic integrated circuit (OEIC) photoreceivers. The transimpedance amplifier has an open-loop gain of 5.7 and a bandwidth of 3.0 GHz, which represent the highest gain and the highest speed performance reported for 1.3-1.55- mu m-wavelength OEIC receivers.<>
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; phototransistors; receivers; 1.3 to 1.55 micron; 3 GHz; InAlAs-InGaAs; InP substrate; OMCVD-grown; cascode amplifier stage; fiber-optic systems; highest gain; highest speed performance; metal-semiconductor-metal high-electron-mobility transistor; monolithically integrated receiver amplifier; open-loop gain; optoelectronic integrated circuit; transimpedance OEIC receiver; transimpedance amplifier; transimpedance photoreceiver; Bandwidth; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Monolithic integrated circuits; Optoelectronic devices; Performance gain; Schottky diodes;
Journal_Title :
Photonics Technology Letters, IEEE
