Very low threshold 1.5 mu m GaInAs/AlGaInAs BH GRINSCH strained-layer quantum well laser diodes grown by MOCVD

Author

Kasukawa, A. ; Bhat, Ritesh ; Caneau, Catherine ; Andreadakis, N. ; Pathak, Bimalendu ; Zah, C.E. ; Koza, M.A. ; Lee, T.P.

Author_Institution

Bell Commun. Res., Red Bank, NJ, USA

Volume

27

Issue

18

fYear

1991

Firstpage

1676

Lastpage

1678

Abstract

A very low threshold current density of 400 A/cm² was obtained in a 1.5 mu m GaInAs/AlGaInAs compressive strained-layer quantum well laser diode, grown by metal organic chemical vapour deposition (MOCVD), with continuously graded-index separate-confinement-heterostructure. A very low threshold current of 3.6 mA was achieved in a high reflective coated 130 mu m long buried heterostructure laser diode with MOCVD grown semi-insulating current blocking layer. The lasing wavelength was 1.48 mu m.

Keywords

III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; indium compounds; semiconductor junction lasers; vapour phase epitaxial growth; 1.5 to 1.48 micron; 130 micron; 3.6 mA; GaInAs-AlGaInAs; MOCVD; buried heterostructure laser diode; compressive strained-layer quantum well laser diode; high reflective coated; lasing wavelength; low threshold current; low threshold current density; metal organic chemical vapour deposition; semi-insulating current blocking layer; semiconductors;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19911047

Filename

132878