DocumentCode :
1087950
Title :
IVB-3 long-lived GaAlAs laser diodes with multiple quantum wells grown by organometallic vapor phase epitaxy
Author :
Paoli, T.L. ; Lindstrom, C. ; Burnham, R.D. ; Scifres, D.R. ; Streifer, W.
Volume :
30
Issue :
11
fYear :
1983
fDate :
11/1/1983 12:00:00 AM
Firstpage :
1593
Lastpage :
1593
Keywords :
Accelerated aging; Diode lasers; Epitaxial growth; Fiber lasers; Laser modes; Optical materials; Protons; Pulse width modulation; Quantum well lasers; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21384
Filename :
1483285
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1087950
