DocumentCode :
1087960
Title :
InP/InGaAs heterojunction phototransistors
Author :
Campbell, Joe C. ; Dentai, Andrew G. ; Burrus, Charles A., Jr. ; Ferguson, John F.
Author_Institution :
Crawford Hill Lab., Bell Labs., Holmdel, NJ, USA
Volume :
17
Issue :
2
fYear :
1981
fDate :
2/1/1981 12:00:00 AM
Firstpage :
264
Lastpage :
269
Abstract :
We describe the fabrication and device characteristics of experimental back-illuminated InP/InGaAs n-p-n heterojunction phototransistors. These devices exhibit photoresponse in the wavelength range of 
m. An optical gain of 40 at an input power of 1 nW (an improvement of 1000 in sensitivity over previously reported phototransistors) has been observed. Gains as high as 1000 have been achieved for higher incident power levels.
m. An optical gain of 40 at an input power of 1 nW (an improvement of 1000 in sensitivity over previously reported phototransistors) has been observed. Gains as high as 1000 have been achieved for higher incident power levels.Keywords :
Optical fiber receivers; Phototransistors; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Indium phosphide; Optical materials; Optical noise; Optical receivers; Optical sensors; Photodiodes; Phototransistors;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1071072
Filename :
1071072
Link To Document :
