• DocumentCode
    1087960
  • Title

    InP/InGaAs heterojunction phototransistors

  • Author

    Campbell, Joe C. ; Dentai, Andrew G. ; Burrus, Charles A., Jr. ; Ferguson, John F.

  • Author_Institution
    Crawford Hill Lab., Bell Labs., Holmdel, NJ, USA
  • Volume
    17
  • Issue
    2
  • fYear
    1981
  • fDate
    2/1/1981 12:00:00 AM
  • Firstpage
    264
  • Lastpage
    269
  • Abstract
    We describe the fabrication and device characteristics of experimental back-illuminated InP/InGaAs n-p-n heterojunction phototransistors. These devices exhibit photoresponse in the wavelength range of 0.95-1.6 \\mu m. An optical gain of 40 at an input power of 1 nW (an improvement of 1000 in sensitivity over previously reported phototransistors) has been observed. Gains as high as 1000 have been achieved for higher incident power levels.
  • Keywords
    Optical fiber receivers; Phototransistors; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Indium phosphide; Optical materials; Optical noise; Optical receivers; Optical sensors; Photodiodes; Phototransistors;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1981.1071072
  • Filename
    1071072
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1087960