• DocumentCode
    1087961
  • Title

    IVB-5 amomalous temperature-dependence of the effective bimolecular recombination and the explanation of low T0in 1.3µm InGaAsP light sources

  • Author

    Su, C.B. ; Olshansky, R. ; Powazinik, W. ; Manning, John

  • Volume
    30
  • Issue
    11
  • fYear
    1983
  • fDate
    11/1/1983 12:00:00 AM
  • Firstpage
    1594
  • Lastpage
    1595
  • Keywords
    Absorption; Charge carrier density; Charge carrier lifetime; Current measurement; Density measurement; Gallium arsenide; Indium phosphide; Laboratories; Temperature dependence; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1983.21385
  • Filename
    1483286
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1087961