DocumentCode
1087969
Title
Characterization of In0.53 Ga0.47 As photodiodes exhibiting low dark current and low junction capacitance
Author
Leheny, R.F. ; Nahory, Robert E. ; Pollack, Martin A. ; Beebe, Edgar D. ; DeWinter, J.
Author_Institution
Bell Laboratories, Holmdel, NJ, USA
Volume
17
Issue
2
fYear
1981
fDate
2/1/1981 12:00:00 AM
Firstpage
227
Lastpage
231
Abstract
The preparation and properties of grown p-n homojunction In0.53 Ga0.47 As photodiodes for operation in the 
m wavelength range are described. At a reverse bias of 20 V, these diodes exhibit generation-recombination limited dark current as low as 
A, junction capacitance of 0.3 pF, and pulse response corresponding to a circuit-limited rise time of 60 ps and diffusion-limited full width (FWHM) of 140 ps.
m wavelength range are described. At a reverse bias of 20 V, these diodes exhibit generation-recombination limited dark current as low as A, junction capacitance of 0.3 pF, and pulse response corresponding to a circuit-limited rise time of 60 ps and diffusion-limited full width (FWHM) of 140 ps.Keywords
Optical fiber receivers; Capacitance; Dark current; Etching; FETs; Helium; Indium phosphide; Optical pulse generation; P-i-n diodes; P-n junctions; Photodiodes;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1981.1071073
Filename
1071073
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