DocumentCode :
1087976
Title :
The GaAlAsSb quaternary and GaAlSb ternary alloys and their application to infrared detectors
Author :
Law, H. David ; Chin, Raymond ; Nakano, Kenichi ; Milano, Raymond A.
Author_Institution :
TRW Technology Research Center, El Segundo, CA, USA
Volume :
17
Issue :
2
fYear :
1981
fDate :
2/1/1981 12:00:00 AM
Firstpage :
275
Lastpage :
283
Abstract :
GaAlAsSb quaternary alloys and GaAlSb ternary alloys have been grown by liquid phase epitaxy (LPE) at 550°C and 450°C, respectively. The material compositions and epitaxial structures are suitable for fabricating photodiodes sensitive in the 
m wavelength range. Various avalanche photodiode structures fabricated in these materials are discussed. The ion implanted GaAlAsSb APD\´s exhibit a high gain of 100, 82 percent quantum efficiency, and a FWHM of 400 ps. The heterojunction GaAlAsSb APD\´s have a gain of 40, 92 percent quantum efficiency, and a FWTM of 150 ps. The only remaining material problem which limits the performance of these devices is the high-surface leakage current.
m wavelength range. Various avalanche photodiode structures fabricated in these materials are discussed. The ion implanted GaAlAsSb APD\´s exhibit a high gain of 100, 82 percent quantum efficiency, and a FWHM of 400 ps. The heterojunction GaAlAsSb APD\´s have a gain of 40, 92 percent quantum efficiency, and a FWTM of 150 ps. The only remaining material problem which limits the performance of these devices is the high-surface leakage current.Keywords :
Avalanche photodiodes; Gallium materials/devices; Optical fiber receivers; Avalanche photodiodes; Diodes; Fluctuations; Gas lasers; Infrared detectors; Ionization; Laser noise; Leakage current; Optical materials; Phase detection;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1071074
Filename :
1071074
Link To Document :
