DocumentCode :
1087977
Title :
Emergent faces in crystal etching
Author :
Hubbard, Ted J. ; Antonsson, Erik K.
Author_Institution :
Div. of Eng. & Appl. Sci., California Inst. of Technol., Pasadena, CA, USA
Volume :
3
Issue :
1
fYear :
1994
fDate :
3/1/1994 12:00:00 AM
Firstpage :
19
Lastpage :
28
Abstract :
The time development of emergent faces in crystal etching is investigated. We present and discuss a novel computational approach, based on an intuitive geometrical derivation, for predicting an etched shape given an initial polygonal (mask) shape and a diagram of etch rate as a function of orientation. A two-dimensional geometric model is derived which determines the etched shape as a function of time. The model is both intuitive and easy to implement manually or by computer. Because the model is intuitive in nature, some results can be obtained from only partial information. In addition, the model is a first step in the transition from analysis to design. Rather than predicting the etched shape for a given original shape, often what is desired is the original mask shape needed to produce a particular etched shape. This inversion process is carried out for some special cases. The concepts of equilibrium or eigen shapes (Eshapes), limit shapes, and time scaling are introduced. Model predictions are compared with experimental results. The extension from two dimensions to three is also introduced
Keywords :
eigenvalues and eigenfunctions; etching; micromechanical devices; semiconductor device models; semiconductor process modelling; semiconductor technology; Eshapes; MEMS design; MEMS fabrication; computational approach; crystal etching; eigen shapes; emergent faces; equilibrium; etch rate; etched shape; geometric model; initial polygonal mask shape; intuitive geometrical derivation; limit shapes; microelctromechanical systems; micromechanicalelctrical systems; orientation; original mask shape; partial information; time development; time scaling; Anisotropic magnetoresistance; Crystallization; Design engineering; Design methodology; Etching; Fabrication; Micromechanical devices; Shape; Silicon; Very large scale integration;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/84.285721
Filename :
285721
Link To Document :
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