Title :
The crystallization path: A way to the GaxIn1-xAsyP1-yphase diagram
Author :
Cremoux, B. ; Cremoux, Baudouin De
Author_Institution :
Laboratoire de Central Recherches, Thomson CSF, Orsay, France
fDate :
2/1/1981 12:00:00 AM
Abstract :
It is shown that already existing thermodynamic models can give a good description of the liquid-solid equilibrium in the GaInAsP system. After a reexamination of the parameters used in the models, they are compared to the reported liquid-phase epitaxy experiments and found in agreement provided that the effect of supersaturation is taken into account along the crystallization path and that alloys which are grown lattice matched on
Keywords :
Gallium materials/devices; Crystallization; Epitaxial growth; Indium phosphide; Lattices; Optical devices; Optical saturation; Semiconductor process modeling; Solid modeling; Substrates; Thermodynamics;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1981.1071076
