Title :
VA-1 a new Ni/Ti/Au gate AlGaAs/GaAs FET
Author :
Takanashi, Yasuyuki ; Ishibashi, Takayuki ; Sugeta, T.
fDate :
11/1/1983 12:00:00 AM
Keywords :
Etching; FETs; Gallium arsenide; Gold; Heat treatment; MESFETs; Noise figure; Temperature control; Threshold voltage; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21389
