DocumentCode

1088026

Title

VA-2 optimization of ion implanted GaAs low noise FET

Author

Feng, M. ; Kanber, H. ; Eu, V.K. ; Hackett, L.H. ; Yamasaki, H. ; Watkin, E.T. ; Schellenberg, J.M.

Author_Institution

Hughes Torrance Research Center, Torrance, CA

Volume

30

Issue

11

fYear

1983

fDate

11/1/1983 12:00:00 AM

Firstpage

1598

Lastpage

1598

Keywords

Buffer layers; FETs; Frequency; Gain; Gallium arsenide; Implants; Ion implantation; MESFETs; Noise figure; Noise measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1983.21390

Filename

1483291