DocumentCode :
1088058
Title :
Electroreflectance study of InGaAsP quaternary alloys lattice matched to InP
Author :
Yamazoe, Yoshimitsu ; Nishino, Taneo ; Hamakawa, Yoshihiro
Author_Institution :
Faculty of Engineering Science, Osaka University, Osaka, Japan
Volume :
17
Issue :
2
fYear :
1981
fDate :
2/1/1981 12:00:00 AM
Firstpage :
139
Lastpage :
144
Abstract :
Characterization of InGaAsP lattice matched to InP has been performed by electroreflectance measurement. For the measurement, In1-x Gax Asy P1-y alloys ( 
) were grown on InP substrates using a vertical LPE furnace and Schottky-barrier diodes were fabricated on them. Analysis of the electroreflectance (ER) spectra taken at the low-field condition has enabled us to determine precisely the energies of the fundamental band edge and the corresponding spin-orbit split-off edge of InGaAsP alloys lattice-matched to InP over the whole composition range. The compositional variations of the band edge, its temperature coefficient near room temperature and the spin-orbit splitting of the valence band in the InGaAsP quaternary alloy system are reported.
) were grown on InP substrates using a vertical LPE furnace and Schottky-barrier diodes were fabricated on them. Analysis of the electroreflectance (ER) spectra taken at the low-field condition has enabled us to determine precisely the energies of the fundamental band edge and the corresponding spin-orbit split-off edge of InGaAsP alloys lattice-matched to InP over the whole composition range. The compositional variations of the band edge, its temperature coefficient near room temperature and the spin-orbit splitting of the valence band in the InGaAsP quaternary alloy system are reported.Keywords :
Gallium materials/devices; Semiconductor materials measurements; Cooling; Epitaxial layers; Erbium; Furnaces; Indium phosphide; Lattices; Performance evaluation; Spectroscopy; Surface morphology; Temperature distribution;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1071081
Filename :
1071081
Link To Document :
