Title :
VA-7 High power InP MISFET´s
Author :
Armand, Mehran ; Bui, D.V. ; Chevrier, J. ; Linh, N.T.
fDate :
11/1/1983 12:00:00 AM
Keywords :
Dielectrics and electrical insulation; FETs; Fabrication; Gallium arsenide; Germanium; Indium phosphide; Interface states; Ionization; MISFETs; Thermal conductivity;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21394
