DocumentCode :
1088096
Title :
VB-1 characteristics of p-channel MOSFETs in LPCVD polysilicon and effect of grain boundary passivation on device performance
Author :
Malhi, S.D.S. ; Shah, Rushabh R. ; Chatterjee, P.K. ; Lam, H.W. ; Shichijo, H. ; Bellavance, D.W.
Volume :
30
Issue :
11
fYear :
1983
fDate :
11/1/1983 12:00:00 AM
Firstpage :
1603
Lastpage :
1603
Keywords :
Boron; Grain boundaries; Leakage current; MOSFETs; Passivation; Plasma applications; Plasma devices; Silicon; Threshold voltage; Very large scale integration;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21397
Filename :
1483298
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1088096
