Title :
Wide-stripe AlGaInP laser diodes with current-blocking region near facets grown on misoriented substrates
Author :
Hamada, Hiroyuki ; Shono, M. ; Honda, Shogo ; Hiroyama, R. ; Matsukawa, K. ; Yodoshi, K. ; Yamaguchi, Toru
Author_Institution :
Semicond. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan
Abstract :
Wide-stripe high-power AlGaInP laser diodes ( lambda L=659 nm) with a current-blocking region (CBR) near the facets have been successfully fabricated for the first time by MOCVD using
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; vapour phase epitaxial growth; 20 C; 410 mW; 659 nm; CW output; GaAs substrates; MOCVD; MOVPE; continuous-wave light output power; current-blocking region near facets; high-power AlGaInP laser diodes; linear light output against current characteristics; misoriented substrates; semiconductors; substrate misorientation; wide stripe laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911067
