Title :
VB-6 N-channel MOSFETS fabricated in silicon-on-oxide using a scanning E-beam line source
Author :
Chen, J.Y. ; Rensch, D.B.
fDate :
11/1/1983 12:00:00 AM
Keywords :
Boron; Circuit testing; Dielectric substrates; FETs; Fabrication; MOSFETs; Nitrogen; Silicon; Threshold voltage; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21402
