DocumentCode

1088162

Title

VB-6 N-channel MOSFETS fabricated in silicon-on-oxide using a scanning E-beam line source

Author

Chen, J.Y. ; Rensch, D.B.

Volume

30

Issue

11

fYear

1983

fDate

11/1/1983 12:00:00 AM

Firstpage

1606

Lastpage

1606

Keywords

Boron; Circuit testing; Dielectric substrates; FETs; Fabrication; MOSFETs; Nitrogen; Silicon; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1983.21402

Filename

1483303