DocumentCode
1088172
Title
VB-7 performance of buried nitride CMOS devices
Author
Zimmer, G. ; Vogt, Hendrik ; Neubert, E.
Volume
30
Issue
11
fYear
1983
fDate
11/1/1983 12:00:00 AM
Firstpage
1606
Lastpage
1607
Keywords
CMOS process; Charge carrier processes; Circuit testing; Crystallography; Dielectric substrates; Epitaxial growth; Impact ionization; Indium phosphide; Nitrogen; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21403
Filename
1483304
Link To Document