Title :
VB-7 performance of buried nitride CMOS devices
Author :
Zimmer, G. ; Vogt, Hendrik ; Neubert, E.
fDate :
11/1/1983 12:00:00 AM
Keywords :
CMOS process; Charge carrier processes; Circuit testing; Crystallography; Dielectric substrates; Epitaxial growth; Impact ionization; Indium phosphide; Nitrogen; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21403
