Title :
Vertically compact 15 GHz GaAs/AlGaAs multiple quantum well laser grown by molecular beam epitaxy
Author :
Ralston, J.D. ; Gallagher, Dominic F. G. ; Tasker, P.J. ; Zappe, H.P. ; Esquivias, Ignacio ; Fleissner, J.
Author_Institution :
Fraunhofer Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
A GaAs/AlxGa1-xAs multiple quantum well laser with an electrical modulation bandwidth exceeding 15 GHz has been fabricated. Optimised design of the waveguide, including development of high Al mole fraction (x=0.8) cladding layers, together with a coplanar electrode geometry, has resulted in a vertically compact laser structure suitable for integration.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; optical communication equipment; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; 15 GHz; GaAs-AlGaAs; coplanar electrode geometry; electrical modulation bandwidth; high Al mole fraction cladding; integration; molecular beam epitaxy; multiple quantum well laser; vertically compact laser structure; waveguide design;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911071
