Title :
VIA-7 planar monolithic integration of a photodiode and a GaAs MESFET preamplifier
Author :
Kolbas, R.M. ; Abrokwah, J.
fDate :
11/1/1983 12:00:00 AM
Keywords :
Epitaxial growth; Gallium arsenide; MESFETs; Monolithic integrated circuits; Optical receivers; Photodiodes; Preamplifiers; Schottky barriers; Substrates; Ultrafast optics;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21410
