DocumentCode :
1088282
Title :
Numerical technique to calculate eigenenergies and eigenstates of quantum wells with arbitrary potential profile
Author :
Dave, Digant P.
Author_Institution :
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
Volume :
27
Issue :
19
fYear :
1991
Firstpage :
1735
Lastpage :
1737
Abstract :
A numerical technique for the exact analysis of quantum wells with arbitrary potential profile is presented. Numerical examples for GaAs/AlxGa1-xAs rectangular quantum wells, graded wells and wells with applied electric field are presented. The technique is simple but highly accurate and can be easily implemented on a small computer such as a PC.
Keywords :
aluminium compounds; gallium arsenide; numerical methods; semiconductor quantum wells; GaAs-Al xGa 1-xAs; arbitrary potential profile; eigenenergies calculation; eigenstates calculation; exact analysis; graded wells; numerical technique; quantum wells; rectangular quantum wells; small computer implementation; wells with applied electric field;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19911080
Filename :
132915
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1088282
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