DocumentCode :
1088283
Title :
Improved molecular beam epitaxial growth of Alx Ga1 - x As/GaAs high-radiance LED´s for optical communications
Author :
Lee, Tien-Pei ; Holden, Wayne S. ; Cho, Alfred Y.
Author_Institution :
Bell Comm. Research, Red Bank, NJ, USA
Volume :
17
Issue :
3
fYear :
1981
fDate :
3/1/1981 12:00:00 AM
Firstpage :
387
Lastpage :
391
Abstract :
We report some improvements made in molecular beam epitaxial growth of Alx Ga1-x As/GaAs high-radiance LED\´s for optical communications. These improvements have been achieved by growing these wafers in a system which includes an air-lock wafer-exchange chamber. Interfacial recombination velocity as low as 
cm/s was obtained. The series resistance of the Burrus-type LED\´s was reduced by increasing the acceptor concentrations in the p-layers to a density as high as 1019cm-3using Be as the dopant. CW output of 5.8 mW, or a radiance of 92 W/sr. cm2, at a safe operating current of 150 mA has been obtained in these devices. The device performance is comparable to the best obtained in LPE-grown diodes of the same geometry.
cm/s was obtained. The series resistance of the Burrus-type LED\´s was reduced by increasing the acceptor concentrations in the p-layers to a density as high as 1019cm-3using Be as the dopant. CW output of 5.8 mW, or a radiance of 92 W/sr. cm2, at a safe operating current of 150 mA has been obtained in these devices. The device performance is comparable to the best obtained in LPE-grown diodes of the same geometry.Keywords :
Optical fiber transmitters; Epitaxial growth; Gallium arsenide; Geometry; Light emitting diodes; Molecular beam epitaxial growth; Optical fiber communication; Optical films; Radiative recombination; Semiconductor diodes; Substrates;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1071104
Filename :
1071104
Link To Document :
