DocumentCode
1088329
Title
Analytical modelling of two-dimensional effects on current gain in small-geometry bipolar transistors
Author
Rinaldi, N. ; Strollo, A.G.M. ; Spirito, P.
Author_Institution
Dept. of Electron., Naples Univ., Italy
Volume
27
Issue
19
fYear
1991
Firstpage
1744
Lastpage
1745
Abstract
A model is developed for the current gain of submicrometre bipolar transistors. The model takes into account the actual shape of the emitter-base junction and the effect of carrier recombination at the interface between the intrinsic and extrinsic base, allowing analytical interpretation of the beta dependence on emitter size and spacer geometry.
Keywords
bipolar transistors; electron-hole recombination; semiconductor device models; analytical modelling; beta dependence; bipolar transistors; carrier recombination; current gain; emitter size; emitter-base junction; model; small-geometry; spacer geometry; two-dimensional effects;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19911084
Filename
132919
Link To Document