Title :
New two-dimensional approach for determining depletion layer profile in field-effect transistors
Author :
Marir, B. ; Benabbas, M. ; Bajon, D. ; Baudrand, H.
Author_Institution :
ENSEEIHT, Toulouse, France
Abstract :
An iterative algorithm using the moving frontier technique for determining the depletion layer in field-effect transistors is proposed. The Poisson equation is solved in its integral form using the two-dimensional Green function. The convergence of the iterative procedure is studied. The results are compared with the gradual channel theory.
Keywords :
Green´s function methods; Schottky gate field effect transistors; convergence of numerical methods; field effect transistors; iterative methods; MESFET; Poisson equation; convergence; depletion layer profile; field-effect transistors; integral form; iterative algorithm; moving frontier technique; two-dimensional Green function;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911096
