Title :
Behavior of holes generated by impact ionization in n-channel MOSFET´s
Author :
Kotani, Norihiko ; Kawazu, Satoizu ; Komori, Shinji
Author_Institution :
Computer Development Laboratories Limited, Hyogo, Japan
fDate :
12/1/1983 12:00:00 AM
Abstract :
The behavior of holes, which are generated mainly by impact ionization, is described with the results obtained from a two-dimensional numerical analysis. The hole density has been found to be large even near the source for shorter channel lengths.
Keywords :
Acceleration; Charge carrier processes; Equations; Impact ionization; MOSFET circuits; Numerical analysis; Silicon; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21430
