Title :
0.7–2.7-GHz 12-W Power-Amplifier MMIC Developed Using MLP Technology
Author_Institution :
Integrated Products Bus. Unit, M/A-COM, Roanoke, VA
Abstract :
A design approach and test data for a broadband high-power amplifier monolithic microwave integrated circuit (MMIC) developed using MSAG MESFETs with multilevel-plating technology are presented. A low-loss matching design technique was used in the development of a two-stage amplifier. The UHF/L/S-band amplifier has exhibited greater than 12-W power output and better than 22% power-added efficiency over the 0.7-2.7-GHz frequency range. To our knowledge, these power results represent the state-of-the-art in multioctave high-power MMIC amplifiers
Keywords :
MESFET integrated circuits; MMIC power amplifiers; UHF power amplifiers; wideband amplifiers; 0.7 to 2.7 GHz; 12 W; L-band amplifier; MLP technology; MMIC power-amplifier; MSAG MESFET; S-band amplifier; UHF-band amplifier; broadband high-power amplifier monolithic microwave integrated circuit; broadband power amplifiers; multilevel-plating technology; two-stage amplifier; Broadband amplifiers; Circuit testing; High power amplifiers; Integrated circuit technology; Integrated circuit testing; MESFET integrated circuits; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Broadband power amplifiers; MESFET HPAs; high-power amplifiers (HPAs); monolithic-microwave integrated-circuit (MMIC) HPAs; two-octave HPAs;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2006.889151
