Optimum Bias Load-Line Compensates Temperature Variation of Junction Diode´s RF Resistance

This paper presents a novel temperature-compensation technique to compensate variation of the junction diode´s RF resistance. Here we have theoretically analyzed and experimentally demonstrated the temperature sensitivity of the junction diode´s RF resistance and proposed an optimum dc-bias load line technique to minimize temperature variation of RF resistance of the Schottky barrier, p-i-n, and p-n junction diodes. The proposed optimum load line biasing technique eliminates the requirement of conventional temperature-compensation circuits with temperature sensors to achieve temperature-invariant RF performance of diode-based RF circuits such as a linearizer, attenuator, phase shifter, etc. for various RF applications where it experiences wide temperature variations. The circuit responds directly to the junction temperature of the diode; thus, there will be no compensation error due to temperature gradient and self-heating of the diodes. This technique is very simple, accurate, and suitable to implement in monolithic-microwave integrated-circuit technology