DocumentCode
1088707
Title
The operation of power MOSFET in reverse mode
Author
Chi, Min-Hwa ; Hu, Chenming
Author_Institution
Exel Microelectronics, San Jose, CA
Volume
30
Issue
12
fYear
1983
fDate
12/1/1983 12:00:00 AM
Firstpage
1825
Lastpage
1828
Abstract
Power MOSFET\´s may be used to obtain a low voltage drop in a rectifier circuit. This function will grow more important in future low voltage power supplies. In such a circuit, the MOSFET must operate in the "reverse mode," in the sense that the current flow is opposite to the conventional direction. This paper discusses the
characteristics of power MOS transistors in the reverse mode by extending the theory for device operation in the normal mode. Three regions of operation in the reverse mode are identified. Calculated
curves compare favorably with the measured curves of a commercial power MOSFET.
characteristics of power MOS transistors in the reverse mode by extending the theory for device operation in the normal mode. Three regions of operation in the reverse mode are identified. Calculated
curves compare favorably with the measured curves of a commercial power MOSFET.Keywords
Forward contracts; Immune system; Laboratories; Low voltage; MOSFET circuits; P-n junctions; Power MOSFET; Power supplies; Rectifiers; Schottky diodes;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21452
Filename
1483353
Link To Document