• DocumentCode
    1088707
  • Title

    The operation of power MOSFET in reverse mode

  • Author

    Chi, Min-Hwa ; Hu, Chenming

  • Author_Institution
    Exel Microelectronics, San Jose, CA
  • Volume
    30
  • Issue
    12
  • fYear
    1983
  • fDate
    12/1/1983 12:00:00 AM
  • Firstpage
    1825
  • Lastpage
    1828
  • Abstract
    Power MOSFET\´s may be used to obtain a low voltage drop in a rectifier circuit. This function will grow more important in future low voltage power supplies. In such a circuit, the MOSFET must operate in the "reverse mode," in the sense that the current flow is opposite to the conventional direction. This paper discusses the I-V characteristics of power MOS transistors in the reverse mode by extending the theory for device operation in the normal mode. Three regions of operation in the reverse mode are identified. Calculated I-V curves compare favorably with the measured curves of a commercial power MOSFET.
  • Keywords
    Forward contracts; Immune system; Laboratories; Low voltage; MOSFET circuits; P-n junctions; Power MOSFET; Power supplies; Rectifiers; Schottky diodes;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1983.21452
  • Filename
    1483353