Title :
Photo/EB hybrid exposure process for T-shaped gate superlow-noise HEMTs
Author :
Hosogi, K. ; Nakano, Naoki ; Minami, Hisataka ; Katoh, T. ; Nishitani, Kenji ; Otsubo, M. ; Koksumata, M. ; Nagahama, Kazuhiro
Author_Institution :
Optoelectronic & Microwave Devices Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A process for fabricating T-shaped gates using photo/EB hybrid exposure has been developed. This process is suitable for mass production of high performance HEMTs. A 0.2 mu m T-shaped gate HEMT exhibits very low noise figures of 0.40 and 1.1 dB at 12 and 40 GHz, respectively, and high reliability.
Keywords :
electron beam lithography; electron device noise; high electron mobility transistors; photolithography; 0.2 micron; 0.40 dB; 1.1 dB; 12 GHz; 40 GHz; T-shaped gate; electron beam exposure; hybrid exposure process; noise figures; photoexposures; reliability; superlow-noise HEMTs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911245
