DocumentCode :
1088724
Title :
Neutron radiation tolerance of field-controlled thyristors
Author :
Baliga, B.Jayant
Author_Institution :
General Electric Company, Schenectady, NY
Volume :
30
Issue :
12
fYear :
1983
fDate :
12/1/1983 12:00:00 AM
Firstpage :
1832
Lastpage :
1834
Abstract :
The effect of fast neutron irradiation up to fluences of 1013per cm2upon the static characteristics of field-controlled thyristors is described. The forward voltage drop of these devices increases similar to that of a p-i-n diode. The forward blocking capability is not only retained after neutron irradiation but an increase in forward blocking gain is observed due to carrier removal effect. These results indicate superior radiation tolerance compared with other three terminal power devices.
Keywords :
Bipolar transistors; Capacitance; Current density; MOSFET circuits; Neutrons; P-i-n diodes; Physics; Power MOSFET; Thyristors; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21454
Filename :
1483355
Link To Document :
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