• DocumentCode
    1088724
  • Title

    Neutron radiation tolerance of field-controlled thyristors

  • Author

    Baliga, B.Jayant

  • Author_Institution
    General Electric Company, Schenectady, NY
  • Volume
    30
  • Issue
    12
  • fYear
    1983
  • fDate
    12/1/1983 12:00:00 AM
  • Firstpage
    1832
  • Lastpage
    1834
  • Abstract
    The effect of fast neutron irradiation up to fluences of 1013per cm2upon the static characteristics of field-controlled thyristors is described. The forward voltage drop of these devices increases similar to that of a p-i-n diode. The forward blocking capability is not only retained after neutron irradiation but an increase in forward blocking gain is observed due to carrier removal effect. These results indicate superior radiation tolerance compared with other three terminal power devices.
  • Keywords
    Bipolar transistors; Capacitance; Current density; MOSFET circuits; Neutrons; P-i-n diodes; Physics; Power MOSFET; Thyristors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1983.21454
  • Filename
    1483355
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1088724