A three-dimensional analysis of the laser-beam induced current method to measure the minority-carrier lifetime τ in solar cells is given. In this method the beam is incident normally at a stationary point on the front cell surface, and the lifetime is found by rapdily switching it off and studying the resulting current decay. Expressions for this decay are derived for both thick and thin solar cells, the latter with or without a back surface field (BSF). For thin cells, the most interesting in practice, the current decays according to

for ordinary cells and

for ideal BSF cells where

is the minority-carrier diffusion coefficient and

the cell thickness.