• DocumentCode
    1088733
  • Title

    Analysis of the photocurrent decay (PCD) method for measuring minority-carrier lifetime in solar cells

  • Author

    Ioannou, Dimitris E.

  • Volume
    30
  • Issue
    12
  • fYear
    1983
  • fDate
    12/1/1983 12:00:00 AM
  • Firstpage
    1834
  • Lastpage
    1837
  • Abstract
    A three-dimensional analysis of the laser-beam induced current method to measure the minority-carrier lifetime τ in solar cells is given. In this method the beam is incident normally at a stationary point on the front cell surface, and the lifetime is found by rapdily switching it off and studying the resulting current decay. Expressions for this decay are derived for both thick and thin solar cells, the latter with or without a back surface field (BSF). For thin cells, the most interesting in practice, the current decays according to I(t) \\alpha \\exp{-((1/\\tau )+(\\pi^{2}D/w^{2})t} for ordinary cells and I(t) \\alpha \\exp{-((1/\\tau )+(\\pi^{2}D/4w^{2})t} for ideal BSF cells where D is the minority-carrier diffusion coefficient and w the cell thickness.
  • Keywords
    Current measurement; Geometrical optics; Helium; Laser beams; Microelectronics; Ohmic contacts; Photoconductivity; Photovoltaic cells; Steady-state; Surface emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1983.21455
  • Filename
    1483356