DocumentCode :
1088733
Title :
Analysis of the photocurrent decay (PCD) method for measuring minority-carrier lifetime in solar cells
Author :
Ioannou, Dimitris E.
Volume :
30
Issue :
12
fYear :
1983
fDate :
12/1/1983 12:00:00 AM
Firstpage :
1834
Lastpage :
1837
Abstract :
A three-dimensional analysis of the laser-beam induced current method to measure the minority-carrier lifetime τ in solar cells is given. In this method the beam is incident normally at a stationary point on the front cell surface, and the lifetime is found by rapdily switching it off and studying the resulting current decay. Expressions for this decay are derived for both thick and thin solar cells, the latter with or without a back surface field (BSF). For thin cells, the most interesting in practice, the current decays according to I(t) \\alpha \\exp{-((1/\\tau )+(\\pi^{2}D/w^{2})t} for ordinary cells and I(t) \\alpha \\exp{-((1/\\tau )+(\\pi^{2}D/4w^{2})t} for ideal BSF cells where D is the minority-carrier diffusion coefficient and w the cell thickness.
Keywords :
Current measurement; Geometrical optics; Helium; Laser beams; Microelectronics; Ohmic contacts; Photoconductivity; Photovoltaic cells; Steady-state; Surface emitting lasers;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21455
Filename :
1483356
Link To Document :
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