• DocumentCode
    1088741
  • Title

    An analytical model for the gate capacitance of small-geometry MOS structures

  • Author

    Greeneich, Edwin W.

  • Author_Institution
    Arizona State University, Tempe, AZ
  • Volume
    30
  • Issue
    12
  • fYear
    1983
  • fDate
    12/1/1983 12:00:00 AM
  • Firstpage
    1838
  • Lastpage
    1839
  • Abstract
    An analytical formulation of the gate capacitance of MOS structures which takes into consideration the effects of electrode thickness and lateral gate dimensions is presented. Results are presented in normalized form covering a wide range of typical device dimensions.
  • Keywords
    Analytical models; Conductors; Dielectric constant; Electrodes; MOS devices; Parasitic capacitance; Permittivity;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1983.21456
  • Filename
    1483357
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1088741