DocumentCode
1088793
Title
Lasing characteristics of 1.5 - 1.6 µm GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors
Author
Utaka, Katsuyuki ; Kobayashi, Ken-ichi ; Suematsu, Yasuharu
Author_Institution
KDD Research and Development Laboratories, Tokyo, Japan
Volume
17
Issue
5
fYear
1981
fDate
5/1/1981 12:00:00 AM
Firstpage
651
Lastpage
658
Abstract
Lasing characteristics of
m GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors (DBR-ITG lasers) are given theoretically and experimentally. At this wavelength region the fiber loss is ultimately low, but the effect of the material dispersion is serious. It is theoretically found that single longitudinal mode operation over twice the threshold current is obtainable with high quantum efficiency by optimizing the coupling properties and configurational parameters of the DBR-ITG laser. The experimental results are also demonstrated. Single longitudinal mode operation of
m DBR-ITG lasers under high-speed direct modulation was achieved with a pulsewidth of 1.5 ns.
m GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors (DBR-ITG lasers) are given theoretically and experimentally. At this wavelength region the fiber loss is ultimately low, but the effect of the material dispersion is serious. It is theoretically found that single longitudinal mode operation over twice the threshold current is obtainable with high quantum efficiency by optimizing the coupling properties and configurational parameters of the DBR-ITG laser. The experimental results are also demonstrated. Single longitudinal mode operation of
m DBR-ITG lasers under high-speed direct modulation was achieved with a pulsewidth of 1.5 ns.Keywords
Distributed Bragg reflector lasers; Gallium materials/lasers; Optical fiber transmitters; Dispersion; Distributed Bragg reflectors; Fiber lasers; Indium phosphide; Laser modes; Laser theory; Optical coupling; Optical materials; Quantum mechanics; Threshold current;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1981.1071156
Filename
1071156
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