DocumentCode
1088794
Title
Low-noise MESFET´s for ion-implanted GaAs MMIC´s
Author
Gupta, Aditya K. ; Siu, D.P. ; Ip, Kwant T. ; Petersen, W.C.
Author_Institution
Rockwell International, Thousand Oaks, CA
Volume
30
Issue
12
fYear
1983
fDate
12/1/1983 12:00:00 AM
Firstpage
1850
Lastpage
1854
Abstract
Fabrication considerations for low-noise FETs in ion-implanted GaAs monolithic microwave integrated circuits (MMIC´s) are presented. Processes that can deteriorate FET performance have been identified and some solutions proposed. Low-noise MMIC FETs fabricated along these lines show good microwave performance through 18 GHz, approaching the performance available from similar discrete FETs. 0.8-µm gate-length MMIC FETs with a noise figure Of 2.9 dB and associated gain of 6.1 dB at 18 GHz have been fabricated. These devices are suitable for low-noise applications in ion-implanted GaAs MMIC´s:
Keywords
Fabrication; Gallium arsenide; MESFETs; MMICs; Microwave FET integrated circuits; Microwave FETs; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; Noise figure;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21460
Filename
1483361
Link To Document