DocumentCode :
1088805
Title :
A Ka-band GaAs monolithic phase shifter
Author :
Sokolov, Vladimir ; Geddes, John J. ; Contolatis, A. ; Bauhahn, Paul E. ; Chao, Chente
Author_Institution :
Honeywell Corporate Technology Center, Bloomington, MN
Volume :
30
Issue :
12
fYear :
1983
fDate :
12/1/1983 12:00:00 AM
Firstpage :
1855
Lastpage :
1861
Abstract :
The design and performance of a GaAs monolithic 180° one-bit switched line phase shifter test circuit for 
-band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitics in the switching FET\´s. Over the 27.5-30 GHz band, typical measured differential insertion phase is within 10-20° of the ideal time delay characteristic. Over the same band, the insertion loss for the SAG phase shifter is about 2.5-3 dB per bit. The SAG fabrication technique holds promise in reducing phase shifter insertion loss to about 1.5 dB/bit for 30-GHz operation.
-band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitics in the switching FET\´s. Over the 27.5-30 GHz band, typical measured differential insertion phase is within 10-20° of the ideal time delay characteristic. Over the same band, the insertion loss for the SAG phase shifter is about 2.5-3 dB per bit. The SAG fabrication technique holds promise in reducing phase shifter insertion loss to about 1.5 dB/bit for 30-GHz operation.Keywords :
Circuit testing; Delay effects; FETs; Fabrication; Gallium arsenide; Insertion loss; Phase measurement; Phase shifters; Switching circuits; Time measurement;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21461
Filename :
1483362
Link To Document :
