DocumentCode
1088805
Title
A Ka-band GaAs monolithic phase shifter
Author
Sokolov, Vladimir ; Geddes, John J. ; Contolatis, A. ; Bauhahn, Paul E. ; Chao, Chente
Author_Institution
Honeywell Corporate Technology Center, Bloomington, MN
Volume
30
Issue
12
fYear
1983
fDate
12/1/1983 12:00:00 AM
Firstpage
1855
Lastpage
1861
Abstract
The design and performance of a GaAs monolithic 180° one-bit switched line phase shifter test circuit for 
-band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitics in the switching FET\´s. Over the 27.5-30 GHz band, typical measured differential insertion phase is within 10-20° of the ideal time delay characteristic. Over the same band, the insertion loss for the SAG phase shifter is about 2.5-3 dB per bit. The SAG fabrication technique holds promise in reducing phase shifter insertion loss to about 1.5 dB/bit for 30-GHz operation.
-band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitics in the switching FET\´s. Over the 27.5-30 GHz band, typical measured differential insertion phase is within 10-20° of the ideal time delay characteristic. Over the same band, the insertion loss for the SAG phase shifter is about 2.5-3 dB per bit. The SAG fabrication technique holds promise in reducing phase shifter insertion loss to about 1.5 dB/bit for 30-GHz operation.Keywords
Circuit testing; Delay effects; FETs; Fabrication; Gallium arsenide; Insertion loss; Phase measurement; Phase shifters; Switching circuits; Time measurement;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21461
Filename
1483362
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